High Current & High Voltage Source Measurement Units

Power Semiconductors have a high demand on the test equipment regarding the testing parameters. Our equipment is designed for the high speed production test for power semiconductors. Take a look at our product specifications and our whitepaper. Should you have any questions, our technical support team is glad to help you with your test application setup.

High Current RDS(ON)
and Forward Voltage Measurement


  • Output current pulses up to 2400 A
  • Output voltage up to 50 V
  • Pulse width from 300 µs
  • Extremely low noise with
    linear output stage
  • Integrated current measurement unit
  • Integrated voltage measurement unit
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Drain-Source & Collector-Emitter Leakage Measurement


  • Output voltage from -1500 V to 2500 V
  • Output current pulses ±30 mA
  • Continuous Output current ±8 mA
  • Very fast rise and fall times
  • Integrated voltage & current measurement unit
  • Integrated voltage & current monitor
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Gate-Leakage & Gate-Threshold Measurement


  • Fully isolated design
  • Fast measurement of current in nA range
  • Fast rise and fall times due to integrated sink capability
  • Integrated matrix and digital I/Os
  • Autosensing
  • Digital calibration
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Further Resources

Acrobat Reader PDF Whitepaper

Cost-reduction and simplification: 1000 A high current RDS(on) static parameter DC testing vs. pulse testing @ 300 μs
The need for high-power semiconductors like diodes, MOSFETs, or IGBTs is increasing rapidly. All areas of renewable energy, e-mobility, or industrial electronic drives have a strongly growing need for more powerful components. Testing these components is a big challenge for test engineers. Read more about this topic in our whitepaper.

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